Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
www.vishay.com TZX-Series Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltage stabilization PRIMARY CHARACTERISTICS.
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom. Test current IZT VZ specification Int. construction
2.4 to 36 2; 5
Pulse current Single
UNIT V mA
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TZX-series
TZX-series-TAP
TZX-series
TZX-series-TR
TAPED UNITS PER REEL
10 000 per ammopack (52 mm tape)
10 000 per 14" reel (52 mm tape).
TZX9V1E - Diodes Incorporated
TZX2V4 - TZX36C 500mW EPITAXIAL PLANAR ZENER DIODE Features · · · Planar Die Construction 500mW Power Dissipation on FR-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TZX9V1 |
MCC |
500mW Silicon Zener Diodes |
|
| 2 | TZX9V1 |
Diodes Incorporated |
500mW EPITAXIAL PLANAR ZENER DIODE |
|
| 3 | TZX9V1A |
Vishay |
Small Signal Zener Diodes |
|
| 4 | TZX9V1A |
MCC |
500mW Silicon Zener Diodes |
|
| 5 | TZX9V1A |
Diodes Incorporated |
500mW EPITAXIAL PLANAR ZENER DIODE |
|
| 6 | TZX9V1B |
Vishay |
Small Signal Zener Diodes |
|
| 7 | TZX9V1B |
MCC |
500mW Silicon Zener Diodes |
|
| 8 | TZX9V1B |
Diodes Incorporated |
500mW EPITAXIAL PLANAR ZENER DIODE |
|
| 9 | TZX9V1C |
Vishay |
Small Signal Zener Diodes |
|
| 10 | TZX9V1C |
MCC |
500mW Silicon Zener Diodes |
|
| 11 | TZX9V1C |
Diodes Incorporated |
500mW EPITAXIAL PLANAR ZENER DIODE |
|
| 12 | TZX9V1D |
Vishay |
Small Signal Zener Diodes |
|
