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TZX2V4 - TZX36C 500mW EPITAXIAL PLANAR ZENER DIODE Features · · · Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current A PRELIMINARY B A Mechanical Data · · · · · Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.35 grams (approx.) DO-35 Dim A B C .
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· Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current
A
PRELIMINARY
B
A
Mechanical Data
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·
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· Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.35 grams (approx.)
DO-35 Dim A B C D Min 25.40 ¾ ¾ ¾
D
C
Max ¾ 4.00 0.60 2.00
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified Symbol ¾ @ IF = 200mA VF Pd RqJA Tj, TSTG Value ¾ 1.5 500 300 -65 to +175 Unit ¾ V mW K/W °C
Characteristic Zener Current (See Table on page 2) Forward Voltage Power Dissipat.
TZX10B - Vishay
www.vishay.com TZX-Series Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TZX10 |
MCC |
500mW Silicon Zener Diodes |
|
| 2 | TZX10 |
Diodes Incorporated |
500mW EPITAXIAL PLANAR ZENER DIODE |
|
| 3 | TZX10A |
Vishay |
Small Signal Zener Diodes |
|
| 4 | TZX10A |
MCC |
500mW Silicon Zener Diodes |
|
| 5 | TZX10A |
Diodes Incorporated |
500mW EPITAXIAL PLANAR ZENER DIODE |
|
| 6 | TZX10C |
Vishay |
Small Signal Zener Diodes |
|
| 7 | TZX10C |
MCC |
500mW Silicon Zener Diodes |
|
| 8 | TZX10C |
Diodes Incorporated |
500mW EPITAXIAL PLANAR ZENER DIODE |
|
| 9 | TZX10D |
Vishay |
Small Signal Zener Diodes |
|
| 10 | TZX10D |
MCC |
500mW Silicon Zener Diodes |
|
| 11 | TZX10D |
Diodes Incorporated |
500mW EPITAXIAL PLANAR ZENER DIODE |
|
| 12 | TZX11 |
MCC |
500mW Silicon Zener Diodes |
|
