TZMB3V0 - Vishay Telefunken

TZMB3V0 Silicon Epitaxial Planar Z-Diodes

TZMB... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise VZ–tolerance ± 2% 94 9371 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperat.

Features

D D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise VZ
  –tolerance ± 2% 94 9371 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z
  –current Junction temperature Storage temperature range Test Conditions RthJA 300K/W x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175
  –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics T.