A MIN MAX mm: 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 .051 in: .160 .180 .130 .150 .075 .095 .077 .083 .002 * D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P Other Physical Characteristics m o .c U 4 t e e h S a t a .D w w w B C D* H J K P MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX S MIN MAX .152 .006 0.15 .006 Form Factor: Lead Material: Encaps.
EIA 481-1 m o .c U 4 t e e h S a at .D w w w 0.30 .012 0.76 .030 1.27 .050 0.51 .020 5.21 .205 5.59 .220 REF Tyco/Electronics Raychem Corporation 308 Constitution Drive Menlo Park, CA 94025 800-227-4856 FAX 800-227-4866 PolySwitch® SiBar Thyristor Surge Protectors PRODUCT: TVB200SA DOCUMENT: 24304 PCN: 732781 REV LETTER: B REV DATE: AUGUST 16, 2001 PAGE NO.: 2 OF 2 DEVICE RATINGS @ 25º C (Both Polarities) Parameter Off-State Voltage, Maximum at ID = 5 µA Non-Repetitive Peak Impulse Current Double exponential waveform (Notes 1 and 2) 10x1000 µsec 10/560 µsec 10/160 µsec Symbol VDM IPP1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TVB200SC |
Tyco Electronics |
Circuit Protection Devices | |
2 | TVB1440 |
ETCTI |
TVB1440 4-Channel Video Re-Driver with Equalization (Rev. A) | |
3 | TV-2000T |
Funai |
Manual | |
4 | TV00570002CDGB |
Toshiba |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS | |
5 | TV00570003CDGB |
Toshiba |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS | |
6 | TV045 |
RAMI TECHNOLOGY |
Temperature Compensated Crystal Oscillator | |
7 | TV04A100J |
Comchip Technology |
SMD Transient Voltage Suppressor | |
8 | TV04A100J-G |
Comchip Technology |
SMD Transient Voltage Suppressor | |
9 | TV04A100J-HF |
Comchip Technology |
SMD Transient Voltage Suppressor | |
10 | TV04A100JB |
Comchip Technology |
SMD Transient Voltage Suppressor | |
11 | TV04A100JB-G |
Comchip Technology |
SMD Transient Voltage Suppressor | |
12 | TV04A100JB-HF |
Comchip Technology |
SMD Transient Voltage Suppressor |