TTP120N03AT - Unigroup

TTP120N03AT 30V N-Channel Trench MOSFET

TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON)  Low Gate Charge  Optimized For Fast-switching Applications APPLICATIONS  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Marking and Packa.

Features

 Trench Power MOSFET Technology
 Low RDS(ON)
 Low Gate Charge
 Optimized For Fast-switching Applications APPLICATIONS
 Synchronous Rectification in DC/DC and AC/DC Converters
 Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package TTP120N03AT TO-220 TTD120N03AT TO-252 Marking 120N03AT 120N03AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipat.