TTC3710B - INCHANGE

TTC3710B NPN Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type TTA1452B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High -current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V .

Features

Saturation Voltage IC= 6.0A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 6A; VCE= 1V TTC3710B MIN TYP. MAX UNIT 80 V 0.4 V 1.2 V 5 μA 5 μA 120 240 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products ar.