This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 7.8A,200V,Max.RDS(on)=0.4 Ω @ VGS =10V
• Low gate charge(typical 20nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(No.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSU60R2K3S1 |
Truesemi |
N-Channel MOSFET | |
2 | TSU60R580WT |
Truesemi |
N-Channel MOSFET | |
3 | TSU60R650S1 |
Truesemi |
N-Channel MOSFET | |
4 | TSU60R700WT |
Truesemi |
N-Channel MOSFET | |
5 | TSU60R850S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSU6111 |
ETCTI |
SP2T SWITCH WITH IMPEDANCE DETECTION MICRO-USB SWITCH TO SUPPORT USB UART | |
7 | TSU6111A |
ETCTI |
USB Port SP2T Switch Supports USB UART (Rev. A) | |
8 | TSU65R2K3S1 |
Truesemi |
N-Channel MOSFET | |
9 | TSU65R380WT |
Truesemi |
N-Channel MOSFET | |
10 | TSU65R600WT |
Truesemi |
N-Channel MOSFET | |
11 | TSU65R700S1 |
Truesemi |
N-Channel MOSFET | |
12 | TSU65R950S1 |
Truesemi |
N-Channel MOSFET |