Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 4.0A,600V,Max.RDS(on)=2.5 Ω @ VGS =10V
• Low gate charge(typical 16nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP400A |
FCI |
LOW CAPACITANCE THYRISTOR |
|
| 2 | TSP400AL |
FCI |
LOW CAPACITANCE THYRISTOR |
|
| 3 | TSP400B |
FCI |
LOW CAPACITANCE THYRISTOR |
|
| 4 | TSP400BL |
FCI |
LOW CAPACITANCE THYRISTOR |
|
| 5 | TSP400C |
FCI |
LOW CAPACITANCE THYRISTOR |
|
| 6 | TSP400CL |
FCI |
LOW CAPACITANCE THYRISTOR |
|
| 7 | TSP4264 |
Taiwan Semiconductor Company |
5V/150mA Fixed-Voltage Ultra Low LDO |
|
| 8 | TSP058A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 9 | TSP058B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 10 | TSP058C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 11 | TSP058SA |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 12 | TSP058SB |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|