SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET i.
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 63nC)
• 100% avalanche tested
• Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP20N65S |
Truesemi |
N-Channel MOSFET | |
2 | TSP20U60S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
3 | TSP2-QF2012A3 |
TAITRON |
CHIP LED | |
4 | TSP2-XF2012A3 |
TAITRON |
CHIP LED | |
5 | TSP220A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
6 | TSP220B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
7 | TSP220C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
8 | TSP220SA |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
9 | TSP220SB |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
10 | TSP220SC |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
11 | TSP230A |
FCI |
LOW CAPACITANCE THYRISTOR | |
12 | TSP230AL |
FCI |
THYRISTOR SURGE PROTECTOR |