TSM900N06CH - Taiwan Semiconductor

TSM900N06CH N-Channel Power MOSFET

TSM900N06CH Taiwan Semiconductor N-Channel Power MOSFET 60V, 11A, 90mΩ FEATURES ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ● RoHS Compliant ● Halogen-Free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RDS(on) (max) VGS = 4.5V 100 .

Features

● 100% UIS and Rg tested
● Logic-level gate drive
● Fast switching
● RoHS Compliant
● Halogen-Free according to IEC 61249-2-21 APPLICATIONS
● DC-DC Converters
● Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RDS(on) (max) VGS = 4.5V 100 Qg VGS = 10V 9.5 UNIT V mΩ nC TO-251S (IPAK SL) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 3) Single Pulse Avalanche E.