TSM4946DCS - Taiwan Semiconductor

TSM4946DCS N-Channel Power MOSFET

TSM4946DCS Taiwan Semiconductor N-Channel Power MOSFET 60V, 5.9A, 55mΩ FEATURES ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance ● RoHS Compliant ● Halogen-free APPLICATIONS ● High-Side DC/DC Conversion ● Notebook ● Sever SOP-8 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) 55 mΩ .

Features

● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
● RoHS Compliant
● Halogen-free APPLICATIONS
● High-Side DC/DC Conversion
● Notebook
● Sever SOP-8 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) 55 mΩ Qg 21 nC Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current, Silicon limited TC = 25°C ID 5.9 Continuous Drain Current (Note 1) TC = 2.