TSM4539DCS-RLG - VBsemi

TSM4539DCS-RLG Dual-Channel MOSFET

TSM4539DCS RLG-VB TSM4539DCS RLG-VB Datasheet www.VBsemi.com N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 P-Channel - 30 0.018 at VGS = 10 V 0.020 at VGS = 8 V 0.024 at VGS = 4.5 V 0.040 atVGS = - 10 V 0.044 at VGS = - 8 V 0.050 atVGS= - 4.5 V ID (A)a Qg (Typ.) 8e 8e 6.2 8e - 8e - 8e 18.5 - 7.5 FEATURES.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Motor Drive
• Mobile Power Bank S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 D1 G1 S1 S2 G2 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avala.