TSM4436 Taiwan Semiconductor N-Channel Power MOSFET 60V, 8A, 36mΩ FEATURES ● Advance trench process technology ● High density cell design for ultra low on- resistance ● RoHS Compliant ● Halogen-free APPLICATIONS ● High-Side DC/DC conversion ● Notebook ● Industrial KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V VGS = 10V 36 RDS(on) (max) .
● Advance trench process technology
● High density cell design for ultra low on-
resistance
● RoHS Compliant
● Halogen-free
APPLICATIONS
● High-Side DC/DC conversion
● Notebook
● Industrial
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
60
V
VGS = 10V
36
RDS(on) (max)
mΩ
VGS = 4.5V
43
Qg
10
nC
SOP-8
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain Current
TC= 25°C
ID
8
Pulsed Drain Current
IDM
25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSM4431 |
Taiwan Semiconductor Company |
30V P-Channel MOSFET | |
2 | TSM4433 |
Taiwan Semiconductor Company |
20V P-Channel MOSFET | |
3 | TSM4433D |
Taiwan Semiconductor Company |
20V Dual P-Channel MOSFET | |
4 | TSM4435 |
Taiwan Semiconductor Company |
30V P-Channel MOSFET | |
5 | TSM4435B |
Taiwan Semiconductor |
30V P-Channel MOSFET | |
6 | TSM4404 |
Taiwan Semiconductor Company |
30V N-Channel MOSFET | |
7 | TSM4405P |
Taiwan Semiconductor Company |
P-Channel MOSFET | |
8 | TSM4410 |
Taiwan Semiconductor Company |
N-Channel MOSFET | |
9 | TSM4410D |
Taiwan Semiconductor Company |
25V Dual N-Channel MOSFET | |
10 | TSM4414 |
Taiwan Semiconductor Company |
30V N-Channel MOSFET | |
11 | TSM4415 |
Taiwan Semiconductor Company |
30V P-Channel MOSFET | |
12 | TSM4416D |
Taiwan Semiconductor Company |
30V Dual N-Channel MOSFET |