TSM1NB60CP - Taiwan Semiconductor

TSM1NB60CP N-Channel Power MOSFET

TSM1NB60CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 1.2A, 10Ω FEATURES ● Low RDS(ON) 9.4Ω (Typ.) ● Low gate charge typical @ 7.7nC (Typ.) ● Low Crss typical @ 8pF (Typ.) ● RoHS Compliant ● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 10 Ω Qg 7.7 nC APPLICATIONS ● Power Supply ● Lighting ● Charge.

Features

● Low RDS(ON) 9.4Ω (Typ.)
● Low gate charge typical @ 7.7nC (Typ.)
● Low Crss typical @ 8pF (Typ.)
● RoHS Compliant
● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 10 Ω Qg 7.7 nC APPLICATIONS
● Power Supply
● Lighting
● Charger TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC = 25°C ID 1.2 Pulsed Drain Current (Note 1) IDM 4.8 Total Powe.