TSM-3E20 VCSEL for gener al pur pose FEATURES: • Surface mount package with flat emission surface. • Miniature, epoxy molded. • Driving current between 8 to 15 mA. • Nominal 10° emission angle. • Ideal for sensing applications. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1) Threshold Current Output Power Operating Cu.
• Surface mount package with flat emission surface.
• Miniature, epoxy molded.
• Driving current between 8 to 15 mA.
• Nominal 10° emission angle.
• Ideal for sensing applications.
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Output Power Operating Current Slope Efficiency Wavelength Forward Voltage Breakdown voltage Series Resistance Beam Divergence
Ith Po IOP η λP VF VBD RS θ
1
5 2 12
10 4
mA mW mA
820 2 10
0.20 850 2.2 15 40 10
870 2.5
mW/mA nm V V Ω degree
IF =15 mA(2) Adjustable to establish 1.5 mW output power IF=15.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSM-102-01-S-SV |
Samtec |
TSM Series / Terminal Strips | |
2 | TSM-105-01-S-DV |
Samtec |
SQ POST HEADER | |
3 | TSM-105-01-xxx |
Samtec |
Terminal Strips | |
4 | TSM-108-xx |
Samtec |
TERMINAL STRIPS | |
5 | TSM-1250 |
TRANSCELL |
Single Point | |
6 | TSM006 |
ST Microelectronics |
Primary PWM Controller | |
7 | TSM007 |
ST Microelectronics |
Primary PWM Controller | |
8 | TSM018NA03CR |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
9 | TSM025NB04LCR |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
10 | TSM030 |
SPSEMI |
Surface Mount Devices | |
11 | TSM033NA04LCR |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
12 | TSM033NB04LCR |
Taiwan Semiconductor |
N-Channel Power MOSFET |