This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 18.0A, 200V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 40nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲ {G
●
●
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Av.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF60R150WT |
Truesemi |
N-Channel MOSFET | |
2 | TSF60R190S1 |
Truesemi |
N-Channel MOSFET | |
3 | TSF60R280S1 |
Truesemi |
N-Channel MOSFET | |
4 | TSF60R380S1 |
Truesemi |
N-Channel MOSFET | |
5 | TSF60R460S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSF60R650S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSF60R850S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSF630M |
Truesemi |
N-Channel MOSFET | |
9 | TSF65R190S1 |
Truesemi |
N-Channel MOSFET | |
10 | TSF65R300S1 |
Truesemi |
N-Channel MOSFET | |
11 | TSF65R380WT |
Truesemi |
N-Channel MOSFET | |
12 | TSF65R420S1 |
Truesemi |
N-Channel MOSFET |