TSCDT08065G1 - Taiwan Semiconductor

TSCDT08065G1 650V SiC Merged PIN Schottky Diode

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness.

Features

● Max junction temperature 175°C
● MPS structure for high ruggedness to forward current surge events
● High-speed switching possible
● High forward surge capability
● High-frequency operation
● Positive temperature coefficient on VF
● RoHS compliant
● Halogen-free KEY PARAMETERS PARAMETER VALUE UNIT IF 8 A VRRM 650 V IFSM 72 A TJ MAX 175 °C Package TO-220AC-2L Configuration Single die APPLICATIONS
● General purpose
● Switch mode power supplies
● Power factor correction MECHANICAL DATA
● Case: TO-220AC-2L
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matt.