This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 9.0A, 900V, RDS(on) = 1.4 @VGS = 10 V
• Low gate charge ( typical 45nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD improved capability
GD S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Ene.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSA9N90M |
Truesemi |
N-Channel MOSFET | |
2 | TSA-213244 |
TELEDYNE |
40 WATTS HIGH POWER GaN AMPLIFIER | |
3 | TSA021 |
TNK |
Flyback Transformer Surface Mount Magnetics | |
4 | TSA048 |
TNK |
Flyback Transformer Surface Mount Magnetics | |
5 | TSA1001 |
ST Microelectronics |
A/D CONVERTER | |
6 | TSA1002 |
STMicroelectronics |
50mW A/D CONVERTER | |
7 | TSA1005 |
ST Microelectronics |
A/D CONVERTER | |
8 | TSA1015 |
TP |
PNP SILICON TRANSISTOR | |
9 | TSA1036 |
TSC |
General Purpose PNP Transistor | |
10 | TSA1036D |
TSC |
General Purpose Dual PNP Transistor | |
11 | TSA10N80M |
Truesemi |
N-Channel MOSFET | |
12 | TSA11N90M |
Truesemi |
N-Channel MOSFET |