Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
• 850V @TJ = 150 ℃
• Typ. RDS(on) = 0.21Ω
• Ultra Low gate charge (typ. Qg = 27.5nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSA874 |
Taiwan Semiconductor Company |
PNP Silicon Planar High Voltage Transistor | |
2 | TSA884 |
Taiwan Semiconductor Company |
PNP Silicon Planar High Voltage Transistor | |
3 | TSA-213244 |
TELEDYNE |
40 WATTS HIGH POWER GaN AMPLIFIER | |
4 | TSA021 |
TNK |
Flyback Transformer Surface Mount Magnetics | |
5 | TSA048 |
TNK |
Flyback Transformer Surface Mount Magnetics | |
6 | TSA1001 |
ST Microelectronics |
A/D CONVERTER | |
7 | TSA1002 |
STMicroelectronics |
50mW A/D CONVERTER | |
8 | TSA1005 |
ST Microelectronics |
A/D CONVERTER | |
9 | TSA1015 |
TP |
PNP SILICON TRANSISTOR | |
10 | TSA1036 |
TSC |
General Purpose PNP Transistor | |
11 | TSA1036D |
TSC |
General Purpose Dual PNP Transistor | |
12 | TSA10N80M |
Truesemi |
N-Channel MOSFET |