TSA18N50M - Truesemi

TSA18N50M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.

Features

• 18.0A,500V,Max.RDS(on)=0.38Ω @ VGS =10V
• Low gate charge(typical 50nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS EAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC = 25℃ TC = 100℃ (Note 1) (Note 2) .