TS805C06 (20A) SCHOTTKY BARRIER DIODE K-Pack(L) 10 +0.5 (60V / 20A ) Outline drawings, mm 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 1.2 ±0.2 5.08 0.8 —0.1 2.7 +0.2 0.4 +0.2 1. Gate 2, 4. Drain 3. Source Features Low VF Super high speed switching High reliability by planer design JEDEC EIAJ Connection diagram Applications High speed power switchin.
Low VF Super high speed switching High reliability by planer design
JEDEC EIAJ
Connection diagram
Applications
High speed power switching
1 2 3
Maximum ratings and characteristics
Absolute maximum ratings
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=118°C Sine wave 10ms Conditions Rating 40 48 20
* 80 -40 to +150 -40 to +150 Unit V V A A °C °C
* Average forward current of centertap full wave connect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TS805C04 |
Fuji Electric |
SCHOTTKY BARRIER DIODE | |
2 | TS80000 |
Semtech |
High Efficiency Transmitter Controller | |
3 | TS80002 |
Semtech |
High-Efficiency Transmit Controller | |
4 | TS80003 |
Semtech |
High Efficiency Transmitter Controller | |
5 | TS802C04 |
Fuji Electric |
SCHOTTKY BARRIER DIODE | |
6 | TS802C06 |
Fuji Electric |
SCHOTTKY BARRIER DIODE | |
7 | TS802C09 |
Fuji Electric |
SCHOTTKY BARRIER DIODE | |
8 | TS808C04 |
Fuji Electric |
SCHOTTKY BARRIER DIODE | |
9 | TS808C06 |
Fuji Electric |
SCHOTTKY BARRIER DIODE | |
10 | TS809 |
Taiwan Semiconductor |
Microprocessor Reset Circuit | |
11 | TS809R |
Taiwan Semiconductor |
Microprocessor Reset Circuit | |
12 | TS80C186EB20 |
Intel Corporation |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |