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www.DataSheet4U.com Ordering number : ENN6921 TS7920 NPN Triple Diffused Planar Silicon Transistor TS7920 For Inverter Lighting Equipment Features • • • • Package Dimensions unit : mm 2010C [TS7920] 10.2 3.6 5.1 2.7 6.3 Best suited for push-pull inverter circuit. High breakdown voltage (VCBO=1200V). High reliability (Adoption of HVP process). Adoption of.
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Package Dimensions
unit : mm 2010C
[TS7920]
10.2 3.6 5.1
2.7 6.3
Best suited for push-pull inverter circuit. High breakdown voltage (VCBO=1200V). High reliability (Adoption of HVP process). Adoption of MBIT process.
4.5
1.3
18.0
5.6
1.2
14.0
0.8
15.1
0.4
1 2 3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
2.55
2.55
.
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| 2 | TS7924A |
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| 3 | TS7900 |
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| 4 | TS7900A |
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| 5 | TS7905 |
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| 6 | TS7912 |
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| 8 | TS7990 |
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| 10 | TS7994 |
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| 11 | TS79L00 |
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| 12 | TS79L05 |
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