TQP3M9036 Ultra low noise, High IP3 LNA TQP3M9036−PCB 100−2000 MHz Evaluation Board Standard T/R size = 2500 pieces on a 7” reel 1 of 12 www.qorvo.com TQP3M9036 ® Ultra-Low Noise, High Linearity LNA Absolute Maximum Ratings Parameter Rating Storage Temperature −65 to 150 °C RF Input Power, CW, 50 Ω, T=+25 °C +22 dBm Device Voltage (VDD) +7 .
• 50−2000 MHz Operational Bandwidth
• Ultra-low noise figure, 0.45 dB NF at 900 MHz
• High gain, 19.8 dB Gain at 900 MHz
• High linearity, +36 dBm Output IP3
• High input power ruggedness, >22 dBm PIN, MAX
• Unconditionally stable
• Integrated on-chip matching, 50 ohm in/out
• Integrated active bias
• Integrated shutdown control pin
• 3-5 V positive supply voltage: −Vgg not required
• Pin compatible with high-band TQP3M9037
Functional Block Diagram
Pin 1 Reference Mark
NC 1 RF In 2
NC 3 NC 4
8 NC 7 RF Out 6 Shut Down 5 NC
Applications
• Repeaters
• Mobile Infrastructure
• LTE / WCDMA / CDM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TQP3M9035 |
Qorvo |
High Linearity LNA Gain Block | |
2 | TQP3M9035 |
TriQuint Semiconductor |
High Linearity LNA Gain Block | |
3 | TQP3M9037 |
Qorvo |
High Linearity LNA | |
4 | TQP3M9038 |
TriQuint Semiconductor |
High Linearity LNA Gain Block | |
5 | TQP3M9039 |
TriQuint Semiconductor |
50 - 1500 MHz Dual LNA | |
6 | TQP3M9005 |
TriQuint Semiconductor |
LNA Gain Block | |
7 | TQP3M9006 |
TriQuint Semiconductor |
High Linearity LNA Gain Block | |
8 | TQP3M9006 |
Qorvo |
High Linearity LNA Gain Block | |
9 | TQP3M9007 |
TriQuint Semiconductor |
High Linearity LNA Gain Block | |
10 | TQP3M9008 |
Qorvo |
High Linearity LNA Gain Block | |
11 | TQP3M9008 |
TriQuint Semiconductor |
High Linearity LNA Gain Block | |
12 | TQP3M9009 |
Qorvo |
High Linearity LNA Gain Block |