The TQM700013 is fully matched Power Amplifier Module designed for use in LTE handsets. Its compact 3 x 3 mm package (including coupler) makes it ideal for today’s extremely small data enabled phones. .
• Small 10-pin 3 x 3 mm Module
• Integrated High Performance Coupler
• Built-in Vreg Functionality Eliminates the Need For
External Components
• Low Quiescent Current Provides Long Talk-Time
• High Linearity
• TriQuint’s GaAs BiHEMT / CuFlip® PA Technology
• Optimized for 50 Ω system
• Lead-free 260 °C / RoHS / Halogen-free
Electrical Specifications
Parameter
Typ.
Units
Max POUT E-UTRA ACLR
27.5 dBm −40 dBc
UTRA ACLR1
−40 dBc
UTRA ACLR2
−60 dBc
LPM ICQ
11 mA
Max. Power Current
430
mA
Rx Noise
−130
dBm/Hz
Note: Typical performance for LTE
VCC1 = VCC2 = +3.4 VDC, VEN = ”High”.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TQM700017 |
TriQuint Semiconductor |
LTE Power Amplifier Module with Coupler | |
2 | TQM713019 |
TriQuint Semiconductor |
3V HBT GaAs CDMA 4x4mm Power Amplifier Module | |
3 | TQM713024 |
TriQuint Semiconductor |
3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module | |
4 | TQM7136 |
TriQuint Semiconductor |
3V HBT SiGe CDMA POWER AMPLIFIER MODULE | |
5 | TQM7138 |
TriQuint Semiconductor |
3V HBT SiGe CDMA 4x4mm POWER AMPLIFIER MODULE | |
6 | TQM776003 |
TriQuint Semiconductor |
WCDMA / HSUPA Power Amplifier Module with Coupler | |
7 | TQM7M4006 |
TriQuint Semiconductor |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module | |
8 | TQM7M4007 |
TriQuint Semiconductor |
Quad-Band GSM / GPRS Power Amplifier Module | |
9 | TQM7M4012 |
TriQuint Semiconductor |
3V QUAD - BRAND GSM850/900 DCS/PCS POWER AMPLIFIER MODULE | |
10 | TQM7M4014 |
TriQuint Semiconductor |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module | |
11 | TQM7M4022 |
TriQuint Semiconductor |
3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module | |
12 | TQM7M5002 |
TriQuint Semiconductor |
Quad-Band GSM/EDGE Polar Power Amplifier Module |