• 7-channel Darlington Array • 500-mA Rated Drain Current (Per Channel) • Very Low Output Leakage < 10 nA Per Channel • Power Efficient with Low RDS-on • Extended Temperature Range: TA = –40°C to 125°C • High-Voltage Outputs: 40 V • Compatible with 1.8-V to 5.0-V Logic Interface • Integrated Free-wheeling Diodes for Inductive Load • Improved Noise-immunity .
Description
• 7-channel Darlington Array
• 500-mA Rated Drain Current (Per Channel)
• Very Low Output Leakage < 10 nA Per Channel
• Power Efficient with Low RDS-on
• Extended Temperature Range: TA =
–40°C to 125°C
• High-Voltage Outputs: 40 V
• Compatible with 1.8-V to 5.0-V Logic Interface
• Integrated Free-wheeling Diodes for Inductive Load
• Improved Noise-immunity with integrated RC filter
• Enhanced ESD Protection Exceeds JESD 22
– 2.5-kV
HBM, 1.5-kV CDM
• Available in SOP16 and TSSOP16 Packages
Applications
The TPM2003 is a high-voltage, high-current NMOS transistor array. This device.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPM2015Q |
3PEAK |
Automotive Single-Channel Ultra-Highspeed GaN Predriver | |
2 | TPM2025 |
3PEAK |
Automotive Dual-Channel Ultra-Highspeed GaN Predriver | |
3 | TPM2025Q |
3PEAK |
Automotive Dual-Channel Ultra-Highspeed GaN Predriver | |
4 | TPM215HW01-HGEL03 |
Top Victory Electronics |
TFT LCD | |
5 | TPM2323-30 |
Toshiba Semiconductor |
MICROWAVE POWER GaAs FET | |
6 | TPM2626-14 |
Toshiba Semiconductor |
MICROWAVE SEMICONDUCTOR | |
7 | TPM2626-30 |
Toshiba Semiconductor |
MICROWAVE POWER GAAS FET | |
8 | TPM27224 |
3PEAK |
Low-Side Gate Driver | |
9 | TPM05105 |
Traco Electronic AG |
Mini Switcher | |
10 | TPM05112 |
Traco Electronic AG |
Mini Switcher | |
11 | TPM05124 |
Traco Electronic AG |
Mini Switcher | |
12 | TPM05212 |
Traco Electronic AG |
Mini Switcher |