www.DataSheet4U.com TPC8020-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII) TPC8020-H High-Speed and High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: Qg = 23 nC (ty.
lanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) 1.9 W PD EA S IAR EAR Tch Tstg 1.0 W Circuit Configuration 110 13 0.084 150 −55 to 150 mJ 8 7 6 5 A mJ °C °C 1 2 3 4 Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPC8020-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit °C/W Thermal resistance, channel to a.
TPC8020-H(TE12LQM) N-Channel 20V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.012 at VGS = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPC8021-H |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | TPC8022-H |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | TPC8024-H |
Toshiba |
Silicon N-Channel MOS Type Field Effect Transistor | |
4 | TPC8025 |
Toshiba Semiconductor |
Field Effect Transistor | |
5 | TPC8026 |
Toshiba |
N-Channel MOSFET | |
6 | TPC8027 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | TPC8028 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | TPC8028 |
Toshiba Semiconductor |
Field Effect Transistor | |
9 | TPC8029 |
Toshiba Semiconductor |
Field Effect Transistor | |
10 | TPC8001 |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | TPC8002 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | TPC8003 |
Toshiba Semiconductor |
N-Channel MOSFET |