TP3022B - Motorola Inc

TP3022B NPN SILICON UHF POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3022B/D UHF Power Transistor The TP3022B is designed for common–emitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with state–of–the– art ruggedness and reliability..

Features

1) Collector
  –Emitter Breakdown Voltage (IC = 10 mA, RBE = 75 Ohms) Collector
  –Emitter Leakage (VCE = 26 V, RBE = 75 Ohms) Emitter
  –Base Breakdown Voltage (IC = 5.0 mAdc) Emitter
  –Base Leakage (VBE = 2.5 V) V(BR)CER ICER V(BR)EBO IEBO 40 — 3.5 — — — — — — 5.0 — 1.0 Vdc mA Vdc mA ON CHARACTERISTICS DC Current Gain (IC = 500 mA, VCE = 10 V) hFE 15 — 100 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) Cob — 17 25 pF FUNCTIONAL TESTS Common
  –Emitter Amplifier Power Gain (VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA) Collector Efficiency (VCE = 26 V, Pout = 15 W, f .