TMS29LF040 - Texas Instruments

TMS29LF040 FLASH MEMORIES

The TMS29LF040 and TMS29VF040 are 524 288 by 8-bit (4 194 304-bit), low-voltage, single-supply, programmable read-only memories that can be erased electrically and reprogrammed. These devices are organized as eight independent 64K-byte sectors and are offered with access times between 80 ns and 150 ns. An on-chip state machine controls the program and erase.

Features

A14 A13 A8 A9 A11 G A10 E DQ7 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 PIN NOMENCLATURE A[0:18] DQ[0:7] E G VCC VSS W Address Inputs Inputs (programming) / Outputs Chip Enable Output Enable Power Supply Ground Write Enable description The TMS29LF040 and TMS29VF040 are 524 288 by 8-bit (4 194 304-bit), low-voltage, single-supply, programmable read-only memories that can be erased electrically and reprogrammed. These devices are organized as eight independent 64K-byte sectors and are offered with access times between 80 ns and 150 ns. An on-chip state machine controls the program and erase operations.