TMP3N50ZG - TRinno

TMP3N50ZG N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP3N50Z(G)/TMPF3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W Device TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maxim.

Features

 Low gate charge
 100% avalanche tested
 Improved dv/dt capability
 RoHS compliant
 Halogen free package
 JEDEC Qualification
 Improved ESD performance TMP3N50Z(G)/TMPF3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W Device TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy.