TMP2N60AZG - TRinno

TMP2N60AZG N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP2N60AZ(G)/TMPF2N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 2.0A < 4.0W Device TMP2N60AZ / TMPF2N60AZ TMP2N60AZG / TMPF2N60AZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute.

Features

 Low gate charge
 100% avalanche tested
 Improved dv/dt capability
 RoHS compliant
 Halogen free package
 JEDEC Qualification
 Improved ESD performance TMP2N60AZ(G)/TMPF2N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 2.0A < 4.0W Device TMP2N60AZ / TMPF2N60AZ TMP2N60AZG / TMPF2N60AZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche .