TMP11N50 - TRinno

TMP11N50 N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G VDSS = 550 V @Tjmax ID = 11A RDS(ON) = 0.67 W(max) @ VGS= 10 V D G Device TMP11N50 / TMPF11N50 TMP11N50G / TMPF11N50G Package TO-220 / TO-220F TO-220 /.

Features

 Low gate charge
 100% avalanche tested
 Improved dv/dt capability
 RoHS compliant
 Halogen free package
 JEDEC Qualification
 Fast reverse recovery TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G VDSS = 550 V @Tjmax ID = 11A RDS(ON) = 0.67 W(max) @ VGS= 10 V D G Device TMP11N50 / TMPF11N50 TMP11N50G / TMPF11N50G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP11N50 / TMPF11N50 TMP11N50G / TMPF11N50G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ S.