TMP10N60A - TRinno

TMP10N60A N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60A(G)/TMPF10N60A(G) BVDSS 600V N-channel MOSFET ID RDS(on) 10A <0.7W D G S Device TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parame.

Features

 Low gate charge
 100% avalanche tested
 Improved dv/dt capability
 RoHS compliant
 Halogen free package
 JEDEC Qualification TMP10N60A(G)/TMPF10N60A(G) BVDSS 600V N-channel MOSFET ID RDS(on) 10A <0.7W D G S Device TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power D.