TOSHIBA MOS MEMORY PRODUCT 2,048 WORD X 8 BIT STATIC RAM SI LICON MONOLITH IC N-CHANNEL SILICON GATE MOS PROCESS TMM2018AO-25, TMM2018AO-35 TMM2018AO-45 IOESCRI PTI ONI The TMM2018AD is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance devi.
with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA. When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2018AD is most suitable for use in cache memory and high speed storage. The ~12018AD is offered in a 24 pin standard cerdip package with 0.3 inch width for high density assembly. The T}~12018AD is fabricated with ion implanted N channel silicon gate MOS technology for high performance and high reliability.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TMM2018AD-25 |
Toshiba |
STATIC RAM | |
2 | TMM2018AD-35 |
Toshiba |
STATIC RAM | |
3 | TMM2018AD |
Toshiba |
STATIC RAM | |
4 | TMM2018AP |
Toshiba |
16K-Bit RAM | |
5 | TMM2018AP-25 |
Toshiba |
16K-Bit RAM | |
6 | TMM2018AP-35 |
Toshiba |
16K-Bit RAM | |
7 | TMM2018AP-45 |
Toshiba |
16K-Bit RAM | |
8 | TMM2015BP-10 |
Toshiba |
Static RAM | |
9 | TMM2015BP-12 |
Toshiba |
Static RAM | |
10 | TMM2015BP-15 |
Toshiba |
Static RAM | |
11 | TMM2015BP-90 |
Toshiba |
Static RAM | |
12 | TMM2016BP-10 |
Toshiba |
(TMM2016BP Series) 2K x 8 Bit Static RAM |