TL142 - INCHANGE

TL142 NPN Transistor

·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.

Features

：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor TL142 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)
* Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1
* Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA VCE(sat)-2
* Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(sat)
* Base-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(on)
* Base-Emitter On Voltage IC= 10A ; VCE= 4V ICBO Collector Cutoff current VCB= 100V, IE= 0 ICEO Co.