·125W at 25℃ case temperature ·10A continue collector current ·High-voltage,high forward and reverse energy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition and switching regulator applications ·Characterized for operation in ignition and switching regul.
NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
* Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1
* Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VCE(sat)-2
* Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VCE(sat)-3
* Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(sat)-1
* Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
VBE(sat)-2
* Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
VBE(sat)-3
* Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
IEBO
Emitter Cutoff Current
VEB= .
TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIPL760 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
2 | TIPL760A |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
3 | TIPL760B |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
4 | TIPL760C |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
5 | TIPL760C |
INCHANGE |
NPN Transistor | |
6 | TIPL761 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
7 | TIPL761A |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
8 | TIPL761B |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
9 | TIPL761C |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
10 | TIPL762 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
11 | TIPL762A |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
12 | TIPL765A |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |