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TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C • DC Current Gain hFE = 25 (Minimum) at IC = 1.5A. • Current Gain-Bandwidth Product fT = 3.0MHz (Minimum) at IC = 1.0A. Pin 1. Base 2. Collect.
• Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C
• DC Current Gain hFE = 25 (Minimum) at IC = 1.5A.
• Current Gain-Bandwidth Product fT = 3.0MHz (Minimum) at IC = 1.0A.
Pin 1. Base 2. Collector 3. Emitter
Maximum Ratings
Dimensions A B C D E F G H I J K L M N O P
Minimum Maximum
20.63
22.38
15.38
16.20
1.90 2.70
5.10 6.10
14.81
15.22
11.72
12.84
4.20 4.50
1.82 2.46
2.92 3.23
0.89 1.53
5.26 5.66
18.50
21.50
4.68 5.36
2.40 2.80
3.25 3.65
0.55 0.70
Dimensions : Millimetres
NPN
PNP
TIP35C TIP36C
25 Ampere Complementary Silicon
Power T.
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·With TO-3PN package www.datasheet4u.com ·Complement to type TIP36/36A/36B/36C ·DC current gain hFE=25(Min)@IC=1.5A APPL.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TIP35 |
nELL |
Complementary Silicon Power Transistor |
|
| 2 | TIP35 |
BOURNS |
NPN SILICON POWER TRANSISTORS |
|
| 3 | TIP35 |
Central Semiconductor |
Complementary Silicon Power Transistors |
|
| 4 | TIP35 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | TIP35 |
Comset Semiconductors |
Silicon Power Transistors |
|
| 6 | TIP35 |
INCHANGE |
NPN Transistor |
|
| 7 | TIP3526 |
Vishay Intertechnology |
Infrared Touch Panels |
|
| 8 | TIP35A |
nELL |
Complementary Silicon Power Transistor |
|
| 9 | TIP35A |
BOURNS |
NPN SILICON POWER TRANSISTORS |
|
| 10 | TIP35A |
Motorola |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 11 | TIP35A |
ON Semiconductor |
Complementary Silicon High-Power Transistors |
|
| 12 | TIP35A |
NTE |
Silicon NPN Transistor |
|