TIP35B COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet

TIP35B COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A/D Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain — hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product — hfe = 3.0 m.

Features

ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ v MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP35A TIP36A 60 V 60 V TIP35B TIP36B 80 V 80 V 5.0 25 40 TIP35C TIP36C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector
  –Emitter Voltage Collector
  –Base Voltage Emitter
  –Base Voltage Collector Current — Continuous Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 5.0 PD 125 1.0 Watts W/_C Operating and Storage Junction Temperature Range Unclamped Inductive Load TJ, Tstg ESB
  – 65 to + 150 90 TIP35A TIP35B
* TIP35C
* PNP TIP36A TIP36B
* TIP36C
*
*Motorola Pre.

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Related Product

No.	Partie #	Fabricant	Description
1	TIP35	nELL	Complementary Silicon Power Transistor
2	TIP35	BOURNS	NPN SILICON POWER TRANSISTORS
3	TIP35	Central Semiconductor	Complementary Silicon Power Transistors
4	TIP35	SavantIC	SILICON POWER TRANSISTOR
5	TIP35	Comset Semiconductors	Silicon Power Transistors
6	TIP35	INCHANGE	NPN Transistor
7	TIP3526	Vishay Intertechnology	Infrared Touch Panels
8	TIP35A	nELL	Complementary Silicon Power Transistor
9	TIP35A	BOURNS	NPN SILICON POWER TRANSISTORS
10	TIP35A	Motorola	COMPLEMENTARY SILICON POWER TRANSISTORS
11	TIP35A	ON Semiconductor	Complementary Silicon High-Power Transistors
12	TIP35A	NTE	Silicon NPN Transistor

TIP35B - Motorola