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·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC = 4A ·Complement to Type TIP2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(.
iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage IC= -4A; IB= -0.4A IC= -4A; VCE= -4V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -30V; IB=0 VCB= -70V; IE=0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TIP2955 |
Power Innovations Limited |
PNP SILICON POWER TRANSISTOR |
|
| 2 | TIP2955 |
STMicroelectronics |
Complementary power transistors |
|
| 3 | TIP2955 |
Motorola |
POWER TRANSISTORS |
|
| 4 | TIP2955 |
Comset Semiconductors |
(TIP2955 / TIP3055) Silicon Power Transistors |
|
| 5 | TIP2955 |
ON Semiconductor |
PNP Silicon Power Transistors |
|
| 6 | TIP2955 |
INCHANGE |
PNP Transistor |
|
| 7 | TIP2955 |
NTE |
Silicon PNP Transistor |
|
| 8 | TIP29 |
CDIL |
NPN PLASTIC POWER TRANSISTORS |
|
| 9 | TIP29 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 10 | TIP29 |
INCHANGE |
NPN Transistor |
|
| 11 | TIP29 |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
|
| 12 | TIP29 |
Central Semiconductor |
SILICON NPN POWER TRANSISTORS |
|