SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Continuous Total Power Dissipation at Tc = 25ºC Operating and Storage Junction Temperature Range *5ms < 10% Duty Cycle THERMAL RESISTANCE From Junction to case From Junction to Ambient in free air VCBO VCEO VEB0 IC .
ning Voltage
*
*VCEO (sus)
IC =30mA, IB=0 TIP140/145
TIP141/146
TIP142/147
Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
ICEO ICBO IEBO
*
*hFE
*
*VCE (sat)
*
*VBE (sat)
VCE =1/2 rated VCEO, IB=0 VCB =Rated VCBO, IE=0 VEB =5.0 V, IC=0 IC =5A, VCE =4V IC =10A, VCE =4 V IC =5A, IB=10mA IC =10A, IB =40mA IC =10A, IB =40mA
Base Emitter On Voltage
*
*VBE (on)
IC =10A, VCE =4 V
MIN 60 80 100
1000 500
SWITCHING TIME DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Delay Time Rise Time Storage.
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The.
The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transistors manuf.
TIP145 – TIP146 – TIP147 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base PNP transis.
TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain .
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP140/D Darlington Complementary Silicon Power Transist.
Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications • Collec.
·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Compl.
TIP145, TIP146, TIP147 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REV.
DATA SHEET www.onsemi.com Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (NPN); TIP145, TI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIP140 |
ON Semiconductor |
Darlington Complementary Silicon Power Transistors | |
2 | TIP140 |
CDIL |
NPN TRANSISTORS | |
3 | TIP140 |
INCHANGE |
NPN Transistor | |
4 | TIP140 |
Motorola |
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |
5 | TIP140 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |
6 | TIP140 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Darlington Transistor | |
7 | TIP140 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |
8 | TIP140 |
Bourns Electronic |
NPN SILICON POWER DARLINGTONS | |
9 | TIP140 |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS TRANSISTORS | |
10 | TIP140F |
Fairchild Semiconductor |
NPN Epitaxial Darlington Transistor | |
11 | TIP140F |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | TIP140F |
TRANSYS |
SILICON PLANAR DARLINGTON POWER TRANSISTORS |