Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE *Low VCE(sat) *High current gain 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER MAXIMUM RATINGS(Ta=25°C) CHARACTERISTICS Collector Base Voltage Collector to Emitter Voltage Emitter To base Voltage Collector Current Junction Temperature Storage Temperature Total .
CHARACTERISTICS CURRENT GAIN VS. COLLECTOR CURRENT 10 4 Output Capacitance( pF) 10 3 OUTPUT CAPACITANCE VS. REVERSE-BIASED VOLTAGE Current Gain(Hfe) 10 3 10 2 10 2 10 1 10 10 Collector Current(mA) 2 3 10 1 10 4 10 -1 1 10 Reverse-Biased Voltage 10 2 10 4 ON VOLTAGE VS. COLLECTOR CURRENT 10 4 SATURATIION VOLTAGE VS. COLLECTOR CURRENT Saturation Voltage(mV) 3 On Voltage(mV) 10 3 10 10 10 2 2 10 1 10 3 10 4 10 1 10 2 10 3 10 4 Collector Current(mA) Collector Current(mA) SAFE OPERATING AREA 10 5 SWITCHING TIMES VS. COLLECTOR CURRENT 10 PT=1ms Switching Time.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TIP110 |
INCHANGE |
NPN Transistor |
|
| 2 | TIP110 |
MCC |
Silicon NPN Darlington Power Transistor |
|
| 3 | TIP110 |
RECTRON |
Power Transistors |
|
| 4 | TIP110 |
Motorola |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | TIP110 |
Power Innovations Limited |
NPN SILICON POWER DARLINGTONS |
|
| 6 | TIP110 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|
| 7 | TIP110 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Darlington Transistor |
|
| 8 | TIP110 |
ON Semiconductor |
Silicon NPN Transistor |
|
| 9 | TIP110 |
Comset Semiconductors |
(TIP110 - TIP112) Silicon NPN Darlington Power Transistors |
|
| 10 | TIP110 |
NTE |
Silicon NPN Transistor |
|
| 11 | TIP110 |
Central Semiconductor |
Silicon Power darlington Complementary transistors |
|
| 12 | TIP110 |
TAITRON |
Darlington Power Transistors |
|
