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SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A http://www.DataSheet4U.net/ Sym.
°C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Gate-controlled Turn-on time Ratings VAA = 30 V, RL = 6 Ω RGK(eff) = 5 kΩ Vin = 50 V VAA = 30 V, RL = 6 Ω IRM ≈ 8 A Value 1.75 Unit µs 7.7 ≤ 3.5 ≤ 62.5 °C/W Circuit-communicated Turn-off time Junction to case thermal resistance Junction to free air t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TIC106 |
Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS |
|
| 2 | TIC106A |
Texas Instruments |
PNPN SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 3 | TIC106A |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 4 | TIC106C |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 5 | TIC106C |
INCHANGE |
Thyristor |
|
| 6 | TIC106D |
Texas Instruments |
PNPN SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 7 | TIC106D |
Inchange Semiconductor |
Thyristors |
|
| 8 | TIC106D |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 9 | TIC106D |
BOURNS |
SILICON CONTROLLED RECTIFIER |
|
| 10 | TIC106D |
Qidong Jilai |
5A SCR |
|
| 11 | TIC106E |
Texas Instruments |
PNPN SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 12 | TIC106E |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
