TGM2635-CP - TriQuint Semiconductor

TGM2635-CP X-Band 100 W GaN Power Amplifier

TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) −8 to −0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipation (PDISS), 85°C, Pulsed; PW = 100 us, DC = 10% Input Power (PIN), 50 Ω, 8.

Features

• Frequency Range: 7.9
  – 11 GHz
• PSAT: 50 dBm (PIN = 28 dBm)
• PAE: 35% (PIN = 28 dBm)
• Large Signal Gain: 22 dB (PIN = 28 dBm)
• Small Signal Gain: 26 dB
• Bias: VD = 28 V, IDQ = 1.3 A
• Package Dimensions: 19.05 x 19.05 x 4.52 mm
• Performance Under Pulsed Operation Functional Block Diagram Applications
• X-band Radar
• Satellite Communications
• Data Links Top View Data Sheet Rev. H, May 2023 Ordering Information Part Description TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter .