TGA2813-CP - TriQuint Semiconductor

TGA2813-CP GaN Power Amplifier

TriQuint’s TGA2813-CP is a packaged high-power S-Band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2813-CP achieves 100 W saturated output power, a power-added efficiency of >50%, and 23 dB power gain. The TGA2813-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior .

Features

 Frequency Range: 3.1
  – 3.6 GHz
 Pout: 50 dBm (at PIN = 27 dBm)
 Power Gain: 23 dB (at PIN = 27 dBm)
 PAE: 51 % CW
 Bias: VD = 30 V pulsed (PW = 15 ms, DC = 30 %), IDQ = 300 mA, VG = -3 V Typical
 Package Dimensions: 15.2 x 15.2 x 3.5 mm
 Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General Description TriQuint’s TGA2813-CP is a packaged high-power S-Band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2813-CP achieves 100 W saturated output power, a power-added e.