TGA2624-CP - TriQuint Semiconductor

TGA2624-CP GaN Power Amplifier

TriQuint’s TGA2624-CP is a packaged high-power X-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process. Operating from 9 to 10 GHz, the TGA2624-CP achieves 42 dBm saturated output power, a power-added efficiency of > 37 %, and power gain of 27 dB. The TGA2624-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for super.

Features

 Frequency Range: 9
  – 10 GHz
 Pout: 42 dBm (PIN = 15 dBm)
 PAE: > 37 % (PIN = 15 dBm)
 Power Gain: 27 dB (PIN = 15 dBm)
 Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical (Pulsed: PW = 100 µs, DC = 10%)
 Package Dimensions: 15.2 x 15.2 x 3.5 mm
 Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General Description TriQuint’s TGA2624-CP is a packaged high-power X-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process. Operating from 9 to 10 GHz, the TGA2624-CP achieves 42 dBm saturated output power, a power-.