TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ.) l Small package: SM8 package (2.9 × 2.8 × 1.1mm) l Low cost: Can be achieved minimum function. Pin Assignment (top view.
l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ.) l Small package: SM8 package (2.9 × 2.8 × 1.1mm) l Low cost: Can be achieved minimum function. Pin Assignment (top view) Marking TG2006F Weight: 0.02 g (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Supply voltage VDD1 VDD2 5 5 Gate voltage VGG 1 Input power Pi 10 Power dissipation Pd (Note1) 250 Operating temperature range Topr −40~85 Storage temperature range Tstg −55~150 Note 1: When mounted on 2.5 cm2 × 1.6 t glass epoxy board. Unit V V V mW mW °C °C .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TG2000F |
Toshiba Semiconductor |
TV TUNER/ UHF RF AMPLIFIER APPLICATIONS) | |
2 | TG2002V |
Toshiba Semiconductor |
1.9GHz BAND POWER AMPLIFIER MODULE (PHS DIGITAL CORDLESS TELEPHONE) | |
3 | TG2016SBN |
Seiko |
TCXO/VC-TCXO | |
4 | TG2016SMN |
Epson |
Crystal oscillator | |
5 | TG22-3506ND |
Halo |
SMD 10/100 Isolation Modules | |
6 | TG22-3506NDRL |
Halo |
SMD 10/100 Isolation Modules | |
7 | TG22-3506NL |
Halo |
SMD 10/100 Isolation Modules | |
8 | TG22-3506NLRL |
Halo |
SMD 10/100 Isolation Modules | |
9 | TG22-S010ND |
Halo |
SMD 10/100 Isolation Modules | |
10 | TG22-S010NDRL |
Halo |
SMD 10/100 Isolation Modules | |
11 | TG22-S012ND |
Halo |
SMD 10/100 Isolation Modules | |
12 | TG22-S012NDRL |
Halo |
SMD 10/100 Isolation Modules |