tfr433m.doc version 1.0 16.08.2002 VI TELEFILTER Measurement condition Ambient temperature: 23 Input power level: 10 Terminating Impedance at fc*: for input: 50 for output: 50 °C dBm Ω || 0 pF Ω || 0 pF SAW Resonator Specification TFR 433M 1/5 Characteristics Remark: The minimum of the pass band attenuation amin is defined as the insertion loss ae. Th.
x. 1,8 dB
fR C0 R1 L1 C1 Qu
433,820 MHz 3,0 13,96 61,4 2,2 1199 - 0,036 ppm/K² ppm/yr pF Ω µH fF
± 75 -
kHz
- 10°C... + 70 °C - 30°C... + 85 °C
10 ϕ
-20 ..... + 20 °
*) The terminating impedances depend on parasitics and q-values of matching elements and the board used, and are to be understood as reference values only. Should there be additional questions, do not hesitate to ask for an application note or contact our design team.
*
*) Frequency aging is the change in fR with time. Typically aging is greatest first year after manufacture, decreasing in subsequent years.
*
*
*) ∆f(Hz) = TC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TFR4N |
Toshiba Semiconductor |
Fast Recovery Diode | |
2 | TFR07 |
Toshiba Semiconductor |
Fast Recovery Diode | |
3 | TFR101 |
Tianjin Zhonghuan Semiconductor |
(TFR101 - TFR107) Fast Recovery Rectifier Diodes | |
4 | TFR102 |
Tianjin Zhonghuan Semiconductor |
(TFR101 - TFR107) Fast Recovery Rectifier Diodes | |
5 | TFR103 |
Tianjin Zhonghuan Semiconductor |
(TFR101 - TFR107) Fast Recovery Rectifier Diodes | |
6 | TFR104 |
Tianjin Zhonghuan Semiconductor |
(TFR101 - TFR107) Fast Recovery Rectifier Diodes | |
7 | TFR105 |
Tianjin Zhonghuan Semiconductor |
(TFR101 - TFR107) Fast Recovery Rectifier Diodes | |
8 | TFR106 |
Tianjin Zhonghuan Semiconductor |
(TFR101 - TFR107) Fast Recovery Rectifier Diodes | |
9 | TFR107 |
Tianjin Zhonghuan Semiconductor |
(TFR101 - TFR107) Fast Recovery Rectifier Diodes | |
10 | TFR1N |
Toshiba Semiconductor |
Fast Recovery Diode | |
11 | TFR1T |
Toshiba Semiconductor |
Fast Recovery Diode | |
12 | TFR2N |
Toshiba Semiconductor |
Fast Recovery Diode |