TE28F256J3F105 - Numonyx

TE28F256J3F105 256-Mbit StrataFlash Embedded Memory

Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features „ Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — 256 symmetrically-sized blocks of 128 Kbytes „ Performance — 95 ns initial access time for Easy BGA — 105 ns initial accsss time for TSOP — 25 ns 16-word Asynchronous page-mode reads — 512-Word Bu.

Features

„ Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — 256 symmetrically-sized blocks of 128 Kbytes „ Performance — 95 ns initial access time for Easy BGA — 105 ns initial accsss time for TSOP — 25 ns 16-word Asynchronous page-mode reads — 512-Word Buffer Programming at 1.46MByte/s (Typ) „ Voltage and Power — VCC (Core) = 2.7 V to 3.6 V — VCCQ (I/O) = 2.7 V to 3.6 V — Standby Current: 65 µA (Typ) — Erase & Program Current: 35 mA (Typ) — Page Read: 12 mA (Typ) „ Quality and Reliability — Operating temperature: -40 °C to +85 °C — 100K Minimum erase cycles per block — 65 .