TE12LQM - VBsemi

TE12LQM N-Channel MOSFET

TPC8020-H(TE12LQM) N-Channel 20V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)a 12 11 Qg (Typ.) 6.1 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 % Rg Tested • 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D A.

Features

• Halogen-free
• TrenchFET® Power MOSFET
• Optimized for High-Side Synchronous Rectifier Operation
• 100 % Rg Tested
• 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS
• Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ± 16 V TC = 25 °C 12 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 11 10b, c Pulsed Drain Current TA = 70 °C IDM 8b, c 47 A Continuous Source-Drain Diode Current TC.