TDG650E60 - Teledyne

TDG650E60 Bottom- or Top-side Cooled 650V E-mode GaN FET

Teledyne’s TDG650E60 is an enhancement mode GaN- on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with very high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current performance and excellent thermal characteristics..

Features

• 650 V enhancement mode power switch with P-GaN gate structure
• Bottom- or Top-side cooled configuration
• RDS(on) = 25 mΩ (typ)
• IDS(max) = 60 A
• Ultra-low FOM Island Technology® die
• Ultra-low inductance GaNPX® package
• Easy gate drive requirements (0 V to 6 V) with 7V tolerance
• Transient tolerant gate drive (-20 / +10 V) 1μs
• Very high switching frequency (> 10 MHz)
• Reverse current capability
• Zero reverse recovery loss
• Small 11 x 9 mm2 PCB footprint
• Source Sense (SS) pads for optimized gate drive
• Dual gate and source sense pads for optimal board layout
• RoHS compliant
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