TD200F - Eupec

TD200F THYRISTOR MODULE

www.DataSheet4U.com European PowerSemiconductor and Electronics Company Marketing Information TT 200 F 35 28,5 5 6 www.DataSheet4U.com 80 9 18 M8 92 18 115 AK K K1 G1 K2 G2 A VWK Okt. 1996 www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSheet4U.com Elektrische Eigenschaften Höchstzulässige Werte TT 200 F, TD 200 F, DT 200 F.

Features

p = 10 ms tvj = 25°C, t p = 10 ms tvj = tvj max , tp = 10 ms VD≤67%VDRM , f0=50Hz IGM =1A, diG/dt=1A/µs critical rate of rise of off-state voltage tvj = tvj max , VD = 67% V DRM 6.Kennbuchstabe/6th letter B 6.Kennbuchstabe/6th letter C 6.Kennbuchstabe/6th letter L 6.Kennbuchstabe/6th letter M tvj = tvj max , iT = 700 A tvj = tvj max tvj = tvj max tvj = 25 °C, v D = 6 V tvj = 25 °C, v D = 6 V tvj = tvj max , vD = 6 V tvj = tvj max , vD = 0,5 V DRM tvj = 25 °C, v D = 6 V, R A = 10 Ω tvj = 25 °C,v D = 6 V, R GK > = 20 Ω iGM = 1 A, di G/dt = 1 A/µs, t g = 10 µs tvj = tvj max vD = VDRM , vR = VRRM .